The 78th JSAP Autumn Meeting, 2017

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[7a-C13-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 7, 2017 9:00 AM - 12:15 PM C13 (office 2-2)

Takashi Suemasu(Univ. of Tsukuba), Kosuke Hara(Univ. of Yamanashi)

12:00 PM - 12:15 PM

▲ [7a-C13-12] Formation of hydrogenated amorphous Si layers by RF plasma generator on Al-capped Si(111) substrate: application to BaSi2 solar cells

〇(M2)Zhihao Xu1, Tianguo Deng1, Ryota Takabe1, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba)

Keywords:BaSi2