[7a-C16-1~12] 17.2 Graphene

△ [7a-C16-10] Capacitance measurement of h-BN encapsulated bilayer graphene on quartz substrate

〇Teerayut Uwanno^1,2, Takashi Taniguchi³, Kenji Watanabe³, Kosuke Nagashio^1,4 (1.Univ. of Tokyo, 2.KMITL, 3.NIMS, 4.PRESTO-JST)

Keywords:bilayer graphene, h-BN

Due to limited top gate area, parasitic capacitance and frequency dependence of top gate capacitance have been major issues in capacitance measurement of h-BN encapsulated bilayer graphene on n⁺-Si substrate. Using graphite as back gate electrode, the device can be fabricated on quartz substrate. This results in drastic reduction of parasitic capacitance and frequency dependence of top gate capacitance, making the evaluation of band gap of h-BN encapsulated bilayer graphene by quantum capacitance measurement possible.