The 78th JSAP Autumn Meeting, 2017

Presentation information

Print

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7a-C17-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 7, 2017 9:00 AM - 12:15 PM C17 (Training Room 2)

Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

9:30 AM - 9:45 AM

[7a-C17-3] In-plane anisotropy of ZnO crystal on ZnO buffer layer formed by mist-CVD

〇Yudai Tanaka1, Hironobu Tanoue1, Masato Takenouchi1, Shoji Nagaoka3,4, Zenji Yatabe1,2, Yusui Nakamura1,4 (1.Kumamoto Univ. GSST, 2.Kumamoto Univ. POIE, 3.Kumamoto IRI, 4.Phoenics)

Keywords:Zinc Oxide, mist-CVD