N-doping into ZnO thin films by post-annealing in NH<sub>3 </sub>ambient gas

Masato Takenouchi; Syohei Wada; Hironobu Tanoue; Naoya Honogo; Shoji Nagaoka; Zenji Yatabe; Yusui Nakamura

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7a-C17-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 7, 2017 9:00 AM - 12:15 PM C17 (Training Room 2)

Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

9:45 AM - 10:00 AM

[7a-C17-4] N-doping into ZnO thin films by post-annealing in NH₃ambient gas

〇Masato Takenouchi¹, Syohei Wada¹, Hironobu Tanoue¹, Naoya Honogo¹, Shoji Nagaoka^3,4, Zenji Yatabe^1,2, Yusui Nakamura^1,4 (1.Kumamoto Univ.GSST, 2.Kumamoto Univ.POIE, 3.Kumamoto Industrial Research Institute, 4.Phoenics)

Keywords:ZnO, mist-CVD, N-doping

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Presentation information

[7a-C17-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7a-C17-4] N-doping into ZnO thin films by post-annealing in NH3 ambient gas

[7a-C17-4] N-doping into ZnO thin films by post-annealing in NH₃ambient gas