Fabrication of InSb nanostructures by using TBCl etching effect

Kouta Tateno; Guoqiang Zhang; Satoshi Sasaki; Kazuhide Kumakura

Presentation information

Oral presentation

9 Applied Materials Science » 9.2 Nanowires and Nanoparticles

[7a-S44-1~9] 9.2 Nanowires and Nanoparticles

Thu. Sep 7, 2017 9:30 AM - 11:45 AM S44 (Conf. Room 5)

Shinjiroh Hara(Hokkaido Univ.)

9:30 AM - 9:45 AM

[7a-S44-1] Fabrication of InSb nanostructures by using TBCl etching effect

〇Kouta Tateno^1,2, Guoqiang Zhang^1,2, Satoshi Sasaki¹, Kazuhide Kumakura¹ (1.NTT Basic Labs., 2.NTT NPC)

Keywords:nanowire, InSb, crystal growth

In order to fabricate InSb nanowires, we have investigated InSb growth on InP or InAs nanowires. By using TBCl, we confirmed InSb nano-crystals formed at the tip of InP or InAs nanowires. We plan to report on our results for longer nanowires.