The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

9 Applied Materials Science » 9.2 Nanowires and Nanoparticles

[7a-S44-1~9] 9.2 Nanowires and Nanoparticles

Thu. Sep 7, 2017 9:30 AM - 11:45 AM S44 (Conf. Room 5)

Shinjiroh Hara(Hokkaido Univ.)

9:45 AM - 10:00 AM

[7a-S44-2] Telecom-band light emitting diodes based on InAs/InP heterostructure nanowires

Guoqiang Zhang1,2, Masato Takiguchi1,2, Tateno Kouta1,2, Tawara Takehiko1,2, Notomi Masaya1,2, Gotoh Hideki1 (1.NTT BRL, 2.NTT NPC)

Keywords:semiconductor, nanowire, light emitting diode

Telecom-band light sources are extremely important for optical data communication. Semiconductor nanowires (NWs) offer the possibility of reducing the footprint of devices for 3D integration and enduring large lattice mismatch for breaking the limitation of material combination. Hence they are being extensively studied in optoelectronic devices. Although ultraviolet, visible, and near-infrared NW light emitting doides (LEDs) have been demonstrated, room-temperature telecom-band NW LEDs have not been realized due to the material issues. Here we demonstrate telecom-band NW LEDs operating at room temperature by using multi-stacked InP/InAs heterostructure NWs grown via indium-particle-assisted vapor-liquid-solid mode.