[7a-S44-1~9] 9.2 Nanowires and Nanoparticles

[7a-S44-2] Telecom-band light emitting diodes based on InAs/InP heterostructure nanowires

〇Guoqiang Zhang^1,2, Masato Takiguchi^1,2, Tateno Kouta^1,2, Tawara Takehiko^1,2, Notomi Masaya^1,2, Gotoh Hideki¹ (1.NTT BRL, 2.NTT NPC)

Keywords:semiconductor, nanowire, light emitting diode

Telecom-band light sources are extremely important for optical data communication. Semiconductor nanowires (NWs) offer the possibility of reducing the footprint of devices for 3D integration and enduring large lattice mismatch for breaking the limitation of material combination. Hence they are being extensively studied in optoelectronic devices. Although ultraviolet, visible, and near-infrared NW light emitting doides (LEDs) have been demonstrated, room-temperature telecom-band NW LEDs have not been realized due to the material issues. Here we demonstrate telecom-band NW LEDs operating at room temperature by using multi-stacked InP/InAs heterostructure NWs grown via indium-particle-assisted vapor-liquid-solid mode.