[7p-A202-1~15] 6.3 Oxide electronics

[7p-A202-11] Local-pressure-induced insulation of a V₂O₃ film with conductive AFM

〇Joe Sakai¹, Natalia Alyabyeva², Jerome Wolfman¹, Patrice Limelette¹, Antoine Ruyter¹, Hiroshi Funakubo³ (1.Univ. Tours, 2.Univ. Paris-Sud, 3.Tokyo Tech.)

Keywords:V2O3, conductive AFM, pressure-induced phase transition

We tried to modify the resistivity of a c-axis-oriented V₂O₃ film by applying a local pressure in a conductive atomic force microscopy (C-AFM) system. Electrical properties were measured with a C-AFM system in an ultra-high-vacuum chamber at room temperature with various tip forces. The current–bias (I-V) properties changed from Ohmic to non-linear at a pressure of 0.29 GPa. The normalized resistance rapidly increased with increase of the pressure in the range from 0.29 to 0.40 GPa, suggesting the proceeding of metal–insulator phase transition in the V₂O₃ sample through the compression of its c-axis.