[7p-A203-1~19] 12.4 Organic light-emitting devices and organic transistors

[7p-A203-9] Effect of Tunneling-Based Access Resistance on Device Characteristics in Organic Thin-Film Transistors

〇Takamasa Hamai¹, Shunto Arai¹, Hiromi Minemawari², Satoru Inoue^2,3, Tatsuo Hasegawa^1,2 (1.Univ. Tokyo, 2.AIST-FLEC, 3.Nippon Kayaku)

Keywords:Organic Semiconductor, Thin-Film Transistor, Access Resistance

Substitution with long alkyl chain is widely used for enhancing organic semiconductor material’s processability and semiconductor performances. We clarified that tunneling-like insulating layer composed of alkyl chain causes large access resistance to cause layer-number dependent device characteristics. In this presentation, we report on numerical calculation based on a FET device with the effect of tunneling transport. We discuss the layer-number dependence of device characteristics caused by nonlinear access resistance in comparison with experimental results.