[7p-A301-1~20] 15.4 III-V-group nitride crystals

[7p-A301-20] Photoluminescence characterization of InGaN/GaN ultra-fine nanopillars fabricated by Hydrogen Environment Anisotropic Thermal Etching (HEATE)

〇Yusuke Namae¹, Akihiro Matsuoka¹, Shun Ishijima¹, Kohei Ogawa¹, Yuki Ooe¹, Yusei Kawasaki¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

Keywords:temperature characteristic, thermal decomposition, quantum dot

We have studied hydrogen anisotropic thermal etching (HEATE) capable of low damage nanofabrication utilizing thermal decomposition of GaN in a hydrogen atmosphere and reported etching characteristics and fabrication of InGaN/GaN nanostructured LED and so on. In this presentation, we report the temperature characteristics of the photoluminescence (PL) peak energy in InGaN/GaN ultra-fine nanopillar array with average top diameter of 15 nm fabricated by HEATE.