Growth and characterization of GaN nanowires (NWs) on the hole-shaped-patterned Al<sub>0.03</sub>Ga<sub>0.97</sub>N templates

Nanami Goto; Myunghee Kim; Hiroki Shibuya; Kohei Sasai; Satoshi Kamiyama; Tetusya Takeuchi; Motoaki Iwaya; Isamu Akasaki

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[7p-A301-1~20] 15.4 III-V-group nitride crystals

Thu. Sep 7, 2017 1:15 PM - 6:45 PM A301 (Main Hall)

Ryuji Katayama(Osaka Univ.), Mitsuru Funato(Kyoto Univ.), Hiroto Sekiguchi(Toyohashi University of Technology)

3:15 PM - 3:30 PM

△ [7p-A301-8] Growth and characterization of GaN nanowires (NWs) on the hole-shaped-patterned Al_0.03Ga_0.97N templates

〇(B)Nanami Goto¹, Myunghee Kim¹, Hiroki Shibuya¹, Kohei Sasai¹, Satoshi Kamiyama¹, Tetusya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Res. Cen., Nagoya Univ.)

Keywords:nanowire, MOVPE

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Presentation information

[7p-A301-1~20] 15.4 III-V-group nitride crystals

△ [7p-A301-8] Growth and characterization of GaN nanowires (NWs) on the hole-shaped-patterned Al0.03Ga0.97N templates

△ [7p-A301-8] Growth and characterization of GaN nanowires (NWs) on the hole-shaped-patterned Al_0.03Ga_0.97N templates