Structural analysis of GaN-based multi-quantum wells on a single nanowire using an X-ray micro beam

Ryoma Seiki; Hiroki Shibuya; Yasuhiko Imai; Kazushi Sumitani; Shigeru Kimura; Tsurugi Kondo; Takao Miyajima; Satoshi Kamiyama; Daichi Imai; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[7p-A301-1~20] 15.4 III-V-group nitride crystals

Thu. Sep 7, 2017 1:15 PM - 6:45 PM A301 (Main Hall)

Ryuji Katayama(Osaka Univ.), Mitsuru Funato(Kyoto Univ.), Hiroto Sekiguchi(Toyohashi University of Technology)

3:30 PM - 3:45 PM

△ [7p-A301-9] Structural analysis of GaN-based multi-quantum wells on a single nanowire using an X-ray micro beam

〇Ryoma Seiki¹, Hiroki Shibuya¹, Yasuhiko Imai², Kazushi Sumitani², Shigeru Kimura², Tsurugi Kondo¹, Takao Miyajima¹, Satoshi Kamiyama¹, Daichi Imai¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki¹ (1.Meijo Univ., 2.Japan Synchrotron Radiation Research Inst.)

Keywords:GaN nanowire, X-ray diffraction, Quantum Confined Stark Effect