The 78th JSAP Autumn Meeting, 2017

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17 Nanocarbon Technology » 17.3 Layered materials

[7p-C11-1~21] 17.3 Layered materials

Thu. Sep 7, 2017 1:45 PM - 7:30 PM C11 (Office 1)

Masaki Tanemura(Nagoya Inst. of Tech.), Yasuhide Ohno(Tokushima univ)

4:00 PM - 4:15 PM

[7p-C11-10] Observation of exfoliated MoS2 on SiO2/Si substrates by scanning nonlinear dielectric microscopy

〇Kohei Yamasue1, Yasuo Cho1 (1.Tohoku Univ.)

Keywords:scanning nonlinear dielectric microscopy, MoS2, transition metal die chalcogenide

We experimentally demonstrate that dominant carrier type and its spatial distribtuion in MoS2 mechanically exfoliated on a SiO2/Si substrate can be imaged by using scanning nonlinear dielectric microscopy.