[7p-C11-1~21] 17.3 Layered materials

[7p-C11-15] Evaluation of Insulating Properties for Ultra-thin h-BN by Taking Account of the Barrier Height of Metal Electrodes

〇Yoshiaki Hattori¹, Takashi Taniguchi², Kenji Watanabe², Kosuke Nagashio^1,3 (1.Tokyo Univ., 2.NIMS, 3.PRESTO-JST)

Keywords:h-BN, Electrical breakdown

Hexagonal boron nitride (h-BN) has attracted much attention as an ideal substrate for 2-dimensional van der Waals heterostructure devices with improved performance. Although we have investigated the insulating properties of h-BN, we didn’t report the properties of ultra-thin h-BN. In the case of ultra-thin film, it is expected that the electrical measurement is affected by flat band voltage of the metal electrodes. In this study, the effect of the flat band voltage was investigated using variety metallic material.