[7p-C16-1~18] 17.2 Graphene

[7p-C16-12] Effect of impurities on the growth of graphene from SiC thermal decomposition

〇(PC)Tomoo Terasawa¹, Wataru Norimatsu², Michiko Kusunoki¹ (1.IMaSS, 2.Sch. of Eng., Nagoya Univ.)

Keywords:graphene, SiC, impurity

Thermal decomposition of SiC (0001) surface is a method to obtain a large area single crystalline graphene. The influence of impurities in the system is conceivable in heating at a high temperature such as 1700 ° C, details of which are not clarified. In this study, we aimed to elucidate the influence of the supply of moisture into the atmosphere on the graphene growth. The results of AFM and Raman spectroscopy showed that the addition of moisture to the atmosphere promotes the growth of multilayered graphene.