[7p-C16-1~18] 17.2 Graphene

[7p-C16-15] Intercalation of nickel atoms under graphene film on SiC(0001)

〇Yutaro Ouchi¹, Wataru Norimatsu¹, Ito Takahiro^1,3, Ryoji Funahashi², Michiko Kusunoki^1,4 (1.Nagoya Univ., 2.AIST, 3.Aichi SR, 4.Nagoya Univ. IMaSS)

Keywords:graphene, SiC, intercalation

Graphene is expected to be one of the next-generation electronic materials due to its very high carrier mobility. It is widely known that graphene on SiC has lower carrier mobility than the exfoliated graphene because of the carrier scattering by the interface layer, called a buffer layer. Then, the carrier mobility would be improved by the interface modification, such as intercalation of other elements. In this study, we tried to intercalate nickel atoms between the buffer layer and the SiC in order to eliminate the effect of the buffer layer. The results of cross sectional TEM observation and Raman spectroscopy showed the formation of Ni intercalated graphene.