[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-10] Optical Properties of Si-doped and Si-implanted β-Ga₂O₃ single crystals

〇Takeyoshi Onuma^1,2, Kohei Sasaki^3,2, Tatekazu Masui³, Tomohiro Yamaguchi¹, Tohru Honda¹, Akito Kuramata³, Masataka Higashiwaki² (1.Kogakuin Univ., 2.NICT, 3.Tamura Corp.)

Keywords:Gallium Oxide, optical property, Si doping

Optical properties of Si-doped and Si-implanted β-Ga₂O₃ single crystals are comparatively studied to investigate their electronic structure and defect states.