Beta-Ga<sub>2</sub>O<sub>3</sub>-based metal-insulator-semiconductor photodetectors with small dark currents

Takayoshi Oshima; Makoto Hashikawa; Sansei Tomizawa; Kohei Sasaki; Akito Kuramata; Toshiyuki Oishi; Makoto Kasu

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 7, 2017 1:45 PM - 6:00 PM C17 (Training Room 2)

Takayoshi Oshima(Saga Univ.), Tomoki Abe(Tottori Univ.)

5:15 PM - 5:30 PM

[7p-C17-14] Beta-Ga₂O₃-based metal-insulator-semiconductor photodetectors with small dark currents

〇Takayoshi Oshima¹, Makoto Hashikawa¹, Sansei Tomizawa¹, Kohei Sasaki^2,3, Akito Kuramata^2,3, Toshiyuki Oishi¹, Makoto Kasu¹ (1.Saga Univ., 2.Tamura Corp., 3.NCT, Inc.)

Keywords:Ga2O3, photodetectors

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Presentation information

[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-14] Beta-Ga2O3-based metal-insulator-semiconductor photodetectors with small dark currents

[7p-C17-14] Beta-Ga₂O₃-based metal-insulator-semiconductor photodetectors with small dark currents