[7p-PA9-1~9] 15.5 Group IV crystals and alloys

[7p-PA9-1] HAXPES characterization of GeSn thin film grown by MOCVD utilizing surfactant effect

〇Koji Usuda¹, Masahiko Yoshiki¹, Kohei Suda², Atsushi Ogura², Mitsuhiro Tomita¹ (1.Toshiba Corp., 2.Meiji Univ.)

Keywords:GeSn, Synchrotron Radiation, HAXPES

GeSn thin-film is attractive for high-mobility channel, and optical application. However,
solubility limit of Sn within a GeSn is considered to be as low as 1 atomic % order, and a
new GeSn growth method and an evaluation method are required to realize a high quality
GeSn film. So, this report reports the depth characterization of chemical states in GeSn thin
film grown by newly developed MOCVD method with surfactant effect by the HAXPES method.