The 78th JSAP Autumn Meeting, 2017

Presentation information

Poster presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[7p-PA9-1~9] 15.5 Group IV crystals and alloys

Thu. Sep 7, 2017 4:00 PM - 6:00 PM PA9 (P)

4:00 PM - 6:00 PM

[7p-PA9-9] Fabrication of n-channel Ge thin-film transistor by AgSb induced crystallization

〇(M2)Benedict Mutunga JOSEPH1, Tatsuya SUZUKI1, Misato FUKAI1, Masao KAMIKO2, Kentaro KYUNO1,3 (1.S. I. T., 2.I. I. S. Tokyo Univ, 3.R. C. G. I. SIT)

Keywords:n-channel, Metal Induced Crystallization, Thin Film Transistor

Ge thin film have been crystalized by layer-exchange metal-induced crystallization method using AgSb alloy as a catalyst. Not only the crystallization of Ge, but also the incorporation of Sb atoms into crystalline Ge layer and their activation at a temperature as low as 330°C have been realized. Thin-film transistors (TFT) have been fabricated using these films as channel layers and operation of n-channel transistors have been demonstrated.