[7p-PA9-1~9] 15.5 IV族結晶，IV-IV族混晶

▲ [7p-PA9-9] Fabrication of n-channel Ge thin-film transistor by AgSb induced crystallization

〇(M2)Benedict Mutunga JOSEPH¹、Tatsuya SUZUKI¹、Misato FUKAI¹、Masao KAMIKO²、Kentaro KYUNO^1,3 (1.S. I. T.、2.I. I. S. Tokyo Univ、3.R. C. G. I. SIT)

キーワード：n-channel, Metal Induced Crystallization, Thin Film Transistor

Ge thin film have been crystalized by layer-exchange metal-induced crystallization method using AgSb alloy as a catalyst. Not only the crystallization of Ge, but also the incorporation of Sb atoms into crystalline Ge layer and their activation at a temperature as low as 330°C have been realized. Thin-film transistors (TFT) have been fabricated using these films as channel layers and operation of n-channel transistors have been demonstrated.