The 78th JSAP Autumn Meeting, 2017

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Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[7p-PB4-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 7, 2017 1:30 PM - 3:30 PM PB4 (P)

1:30 PM - 3:30 PM

[7p-PB4-1] In-plane distribution of 1.5 μm PL intensity in Si/B-doped β-FeSi2/Si stacked structures

〇Shuya Ikeda1, Kenta Setojima1, Kazuya Ogi1, Naohiro Oka1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)

Keywords:FeSi2, PL, electrical property