The 78th JSAP Autumn Meeting, 2017

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Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[7p-PB4-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 7, 2017 1:30 PM - 3:30 PM PB4 (P)

1:30 PM - 3:30 PM

[7p-PB4-7] Formation of Mg2Si1-xSnx thin films by co-sputtering

Hideyuki Wada1, 〇Hiroshi Katsumata1, Hidenari Yamamoto2, Tomoharu Kataoka2, Shinsuke Hirono2, Mamoru Ishikiriyama2 (1.Meiji Univ., 2.Toyota Motor Corp.)

Keywords:Mg2Si, Mg2Sn, Mg2SiSn