2017年第78回応用物理学会秋季学術講演会

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10 スピントロニクス・マグネティクス » 10 スピントロニクス・マグネティクス(ポスター)

[7p-PB7-1~56] 10 スピントロニクス・マグネティクス(ポスター)

2017年9月7日(木) 16:00 〜 18:00 PB7 (国際センター2F)

16:00 〜 18:00

[7p-PB7-29] Magnetic properties of Mn-doped ZnSnAs2 chalcopyrite semiconductor

〇(P)Bakhshi Mehdiyev1,2、Hideyuki Toyota1、Nazim Mamedov2、Ayaz Bayramov2、Naotaka Uchitomi1 (1.Nagaoka Univ. Tech.、2.Inst. of Phys., ANAS)

キーワード:Mn-doped ZnSnAs2, DFT

Mn-doped ZnSnAs2 chalcopyrite structure is one of the most important material to realize semiconductor spintronics because of its high Curie temperature [1-2].
In this work, we study theoretically electronic and magnetic properties of Mn-doped ZnSnAs2 chalcopyrite structure by using first-principles all electron full-potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT). Our calculations were performed for supercells, containing 64 and 128 atoms with the Mn concentrations 3.125% and 6.25%. We studied when Mn magnetic impurity substitutes a single cation (MnZn and MnSn) or both of the two cation sites (MnZn-Sn). From the total energy calculations for 64 atom supercells doped with Mn atoms in Zn-Zn sites were found to be energetically stable in the AFM state. The substitution of Zn-Sn and Sn-Sn positions results in the FM state (Fig.1). In the FM configurations calculated magnetic moment for each Mn is about 4.23μB and 3.99 μB per unit cell when Zn-Sn and Sn-Sn positions were substituted, respectively. The Curie temperature values are roughly estimated from the mean-field approximation.