4:00 PM - 6:00 PM
[7p-PB7-37] Crystallization condition of a γ-AlOx tunnel barrier layer on GaAs in spin-LED
Keywords:Spintronics, Circularly polarized light, Tunnel barrier
Recently, we have reported EL with pure circular polarization at RT in Spin-LEDs. One of the key layers is a γ-like AlOx layer, which has the following characteristics; (1) suppression of interfacial reaction, (2) electrical robustness, (3) low density of interface state, and (4) high spin injection efficiency. Reported here is dependencies of the growth temperature and thickness of Al epilayer on resultant properties, and discussions on (1) to (4).