[7p-S21-1~22] 13.10 Compound solar cells

[7p-S21-9] Suppression of thermal escape of InAs/GaAs quantum-dot superlattice solar cells fabricated at low capping temperature

〇Kazuki Hirao¹, Shigeo Asahi¹, Toshiyuki Kaizu¹, Yukihiro Harada¹, Takashi Kita¹ (1.Kobe Univ.)

Keywords:solar cell, quantum dot, InAs/GaAs

Quantum dot intermediate band solar cells have been attracted, because the extremly high conversion efficiency above 50 %. However, Recombination and thermal escape are one of challenges of them. Then, we fabricated the quantum dot super lattice solar cells capped at low temperature to suppress them simultaneously. From the result of temperature dependence of the photocurrent generated by thermal escape, we demonstrated thermal escape is suppressed. The result also suggests two-step photon absorption, which is the key process of intermediate band solar cells, can be observed at high temperature.