[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

[7p-S22-1] Reduction in contact resistance on n-type AlN by formation of graded-AlGaN cap layer

〇Masanobu Hiroki¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:AlN, AlGaN

We grew graded-AlGaN cap layer on n-type AlN layer to reduce Ohmic contact resistance. For AlN layer without the cap layer, Ohmic contact was not obtained and the current was 3 nA at the bias of 1 V. In contrast, the one with the cap layer, we obtained good Ohmic contact and the current was 3 orders of magnitude greater than that for the AlN layer without the graded layer.