[8a-A202-1~11] 6.3 Oxide electronics

[8a-A202-1] Effect of post-deposition annealing on electrochemically deposited Cu₂O thin-films

〇Yuki Takiguchi¹, AOI Orisaka², Shinsuke Miyajima² (1.Dept. of Physical Electronics, Tokyo Tech., 2.Dept. of Electrical and Electronic Engineering, Tokyo Tech.)

Keywords:cuprous oxide, solar cells, electrochemical deposition

Effect of post-deposition annealing on electrochemically deposited Cu₂O thin-films was investigated to improve their optoelectronic properties. The film annealed at 150 °C exhibits free exciton emission at room temperature and high hole mobility exceed 10 cm²/Vs.