[8a-A413-1~7] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [8a-A413-1] Large Reduction of Fabrication Temperature for Fully Epitaxial Fe/GaO_x/Fe Magnetic Tunnel Junctions

Sai Krishna Narayananellore¹、Norihiro Matsuo^1,2、Naoki Doko^1,2、〇Hidekazu Saito¹、Shinji Yuasa¹ (1.AIST、2.Chiba Univ.)

キーワード：magnetic tunnel junction, gallium oxide

We have recently reported a high MR ratio up to 92% in fully epitaxial Fe(001)/GaO_x(001)/Fe(001) MTJs, where the GaO_x is one of the emerging semiconductors for practical applications. However, the formation temperature of the single-crystalline GaO_x is too high (~500ºC) to apply to practical applications. In this study, we developed a novel fabrication process that can largely reduce the formation temperature of the fully epitaxial MTJ from 500°C to 250°C.