[8a-A413-8~12] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [8a-A413-8] Observation of spin relaxation in Zn doped InP bulk

〇Masayuki Iida¹、Shima Tanigawa¹、Daisuke Tanaka¹、Masaya Takizawa¹、Atsushi Tackeuchi¹ (1.Waseda Univ.)

キーワード：spin relaxation

InP materials have found important applications, such as high-electron mobility transistors. In this study, we investigated the carrier relaxation and spin relaxation in Zn doped InP bulk by time-resolved pump and probe measurement. Compared to undoped InP bulk, the carrier relaxation time decreased by half while the spin relaxation time remained the same. It can be said that within InP bulk, the doping of Zn has little effect on the spin relaxation.