[8a-A413-8~12] 10.4 Semiconductor spintronics, superconductor, multiferroics

▲ [8a-A413-9] Observation of spin relaxation in bulk GaSb grown on GaAs substrate

〇Daisuke Tanaka¹, Lianhe Li², Shima Tanigawa¹, Masayuki Iida¹, Masaya Takizawa¹, Edmund Linfield², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Univ. of Leeds)

Keywords:spin relaxation, GaSb

Gallium antimonide is a III–V semiconductor having a narrow bandgap and a high carrier mobility. Therefore, GaSb is a suitable material for fabricating high frequency electronic devices. In this study, we have investigated the spin relaxation in GaSb grown on a GaAs substrate by time-resolved pump and probe reflection measurement. At 10 K, a clear negative excitation power dependence is observed, which suggests the effect of Bir-Aronov-Pikus process.