[8a-A413-8~12] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [8a-A413-9] Observation of spin relaxation in bulk GaSb grown on GaAs substrate

〇Daisuke Tanaka¹、Lianhe Li²、Shima Tanigawa¹、Masayuki Iida¹、Masaya Takizawa¹、Edmund Linfield²、Atsushi Tackeuchi¹ (1.Waseda Univ.、2.Univ. of Leeds)

キーワード：spin relaxation, GaSb

Gallium antimonide is a III–V semiconductor having a narrow bandgap and a high carrier mobility. Therefore, GaSb is a suitable material for fabricating high frequency electronic devices. In this study, we have investigated the spin relaxation in GaSb grown on a GaAs substrate by time-resolved pump and probe reflection measurement. At 10 K, a clear negative excitation power dependence is observed, which suggests the effect of Bir-Aronov-Pikus process.