[8a-A414-1~8] 13.9 Optical properties and light-emitting devices

[8a-A414-1] Ion Implantation and Thermal Annealing Optimization toward Observation of Luminescence from Single Rare-Earth Elements in Gallium Nitride

〇Shinichiro Sato¹, Hiroshi Okada², Manato Deki³, Akihiro Wakahara², Takeshi Ohshima¹ (1.QST, 2.TUT, 3.Nagoya Univ.)

Keywords:Gallium Nitride, Rare-Earth Doping, Single Photon Emission

Rare-earth elements (REs) doped in gallium nitride (GaN), which show a strong luminescence with narrow line width, is one of candidates for the application of single-photon source (SPS). However, observation of single photon emission from single REs has not been achieved and the requirements for SPS is unclear. We investigated the optimal conditions of GaN substrates, rare-earth ion implantation, and subsequent thermal annealing in order to observe single REs.