The 78th JSAP Autumn Meeting, 2017

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[8a-C11-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 8, 2017 9:00 AM - 12:15 PM C11 (Office 1)

Haruhiko Udono(Ibaraki Univ.), Kenji Yamaguchi(QST)

10:00 AM - 10:15 AM

[8a-C11-5] MBE growth of EuO on Si (111) with atomically flat interface

〇Rento Ohsugi1, Hiroo Omi1,2, Krockenberger Yoshiharu1, Fujiwara Akira1 (1.NTT BRL, 2.NTTNPC)

Keywords:Silicon, EuO, Spintronics

By a Eu-termination of Si (111) surface: Eu-Si (111) (1×2), we have achieved an epitaxial growth of EuO with atomically flat interface, and revealed a growth mechanism of EuO on Si (111). This epitaxiallly grown EuO is a promising structure as a perfect (100 %) spin injector on Si.