Impact of native oxide film on the capacitance-voltage characteristic using Pseudo-MOS structure

Isao Yarita; Shingo Sato; Yasuhisa Omura

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[8a-C11-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 8, 2017 9:00 AM - 12:15 PM C11 (Office 1)

Haruhiko Udono(Ibaraki Univ.), Kenji Yamaguchi(QST)

10:45 AM - 11:00 AM

△ [8a-C11-7] Impact of native oxide film on the capacitance-voltage characteristic using Pseudo-MOS structure

〇Isao Yarita¹, Shingo Sato¹, Yasuhisa Omura¹ (1.Kansai Univ.)

Keywords:Pseudo-MOSFET, native oxide layer, Cole-Cole plot

The pseudo-MOSFET was proposed as a simple way of measuring the electrical characteristics of the SOI wafer without fabricating any device. Influence of native oxide growth on the pseudo-MOS structure on impedance is analyzed.