[8a-C16-1~17] 17.2 Graphene

[8a-C16-1] Direct growth of graphene on h-BN from graphene oxide

〇Seiji Obata¹, Kenji Watanabe², Takashi Taniguchi², Koichiro Saiki¹ (1.Univ. of Tokyo, 2.NIMS)

Keywords:graphene oxide, plasma, h-BN

Graphene on hexagonal boron nitride(h-BN) shows ultra high mobility. However, it has been difficult to grow graphene on h-BN directly due to low activity of h-BN surface. We succeeded in direct growth of graphene on h-BN from GO using plasma treatment with Cu catalyst. The synthesized graphene has the lower G band center around 1583 cm^-1 and shows much larger I_2D/I_G than that on SiO₂.