[8a-C18-1~12] 13.5 Semiconductor devices and related technologies

△ [8a-C18-12] Correspondence between Grain Boundary Structures and Transistor Characteristics in Individual Poly-Si Nanowire TFTs Revealed by Analysis of Massive NBD Maps

〇Takanori Asano¹, Riichiro Takaishi¹, Minoru Oda¹, Kiwamu Sakuma¹, Masumi Saitoh¹, Hiroki Tanaka¹ (1.Toshiba corp.)

Keywords:TFT, Grain boundary, NBD