The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[8a-C18-1~12] 13.5 Semiconductor devices and related technologies

6.1と13.3と13.5のコードシェアセッションあり

Fri. Sep 8, 2017 9:00 AM - 12:15 PM C18 (C18)

Tomonori Nishimura(Univ. of Tokyo), Takahiro Mori(AIST)

11:00 AM - 11:15 AM

[8a-C18-8] Channel thickness scaling induced electron mobility enhancement in UTB-GeOI

〇(PC)WENHSIN CHANG1, T. Irisawa1, H. Ishii1, H. Hattori1, H. Ota1, H. Takagi1, Y. Kurashima1, N. Uchida1, T. Maeda1 (1.AIST)

Keywords:GeOI, MOSFETs, mobility