11:00 AM - 11:15 AM
△ [8a-C18-8] Channel thickness scaling induced electron mobility enhancement in UTB-GeOI
Keywords:GeOI, MOSFETs, mobility
Oral presentation
13 Semiconductors » 13.5 Semiconductor devices and related technologies
Fri. Sep 8, 2017 9:00 AM - 12:15 PM C18 (C18)
Tomonori Nishimura(Univ. of Tokyo), Takahiro Mori(AIST)
11:00 AM - 11:15 AM
Keywords:GeOI, MOSFETs, mobility