Thermoelectric properties of Si<sub>1-x</sub>Ge<sub>x</sub> film formed on glass by Al-induced layer exchange

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

Fri. Sep 8, 2017 9:30 AM - 11:45 AM C19 (C19)

Kentarou Sawano(Tokyo City Univ.)

10:45 AM - 11:00 AM

〇Kinta Kusano¹, Kaoru Toko¹, Atsushi Yamamoto², Takashi Suemasu¹ (1.Univ. of Tsukuba, 2.AIST)

Keywords:Silicon Germanium, Al-induced layer exchange, Thermoelectric