[8a-PA2-1~17] 6.4 Thin films and New materials

[8a-PA2-10] Electrical properties of cubic crystal TiN

〇Daiki Toyama¹, Masahiro Yoshikawa¹, Toshiaki Fujita², Noriaki Nagatomo², Toshiki Makimoto¹ (1.Waseda Univ., 2.Mitsubishi Materials Corp.)

Keywords:titanium nitride, electrical resistivity, grain boundary

Titanium nitride (TiN) is used as an electrode layer in a Si CMOS transistor to prevent peeling of the W metal. It is also used as a barrier layer to prevent the electromigration and the diffusion of the metal atom into a semiconductor layer. Therefore, it is important to investigate the electrical conduction properties of TiN films. In this conference, we will report the electron conduction mechanism in TiN films.