[8a-PA4-1~31] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[8a-PA4-10] Controlling of carrier concentration of GZO film by insertion of metal-Zn buffer layer

〇(M1)Yuki Asano¹, Rei Sugiura¹, Yumika Yamada¹, Shuhei Funaki¹, Yasuji Yamada¹ (1.Simane Univ.)

Keywords:Zinc oxide, Transparent conductive oxide, sputtering