[8a-PA4-1~31] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[8a-PA4-23] Novel Indium Oxide Based Transparent Conductive Oxide Material

〇Yuya Tsuchida¹, Ryo Akiike¹, Hiroyuki Hara¹, Hideto Kuramochi¹ (1.Tosoh corp.)

Keywords:transparent conductive film, low resistance, low temperature process

Transparent conductive oxide (TCO) films are used for various applications such as liquid-crystal displays, solar cells, touch screens and so on. Among the TCO films, indium oxide (In₂O₃) based TCO films, especially tin doped In₂O₃ (ITO) films, are mainly used in industry due to their low resistivity and high transmittance in the visible range. ITO films are normally crystallized by post-annealing above 200°C in order to obtain low resistivity and high transmittance films. However, recent development of devices requests TCO films to realize very low resistivity (about 200μΩcm) by annealed even under 150°C , which is too difficult for conventional ITO materials to achieve. Therefore, main purpose of this work is developing TCO materials which is able to achieve 200μΩcm by annealed under 150°C. Novel TCO material, which can provide 200μΩcm film by annealed under 150°C, has been developed.