[8a-PA4-1~31] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[8a-PA4-26] Study of film growth condition for α-Ga₂O₃ on sapphire substrate by mistCVD

〇Yuji Nakabayashi¹, Satoru Yamada², Satoshi Itoh³, Takeshi Kawae³ (1.JAIST, 2.NIT Ishikawa College, 3.Kanazawa Univ.)

Keywords:Metal Oxide, mistCVD, power semiconductors

Ga₂O₃have a wide band gap and applied materials for a MOS type device and power semiconductors and is attracted a great deal of attention.
Recently, in study of Ga₂O₃ thin films, It a great advancing of atmospheric deposit technique by using the mist chemical vapor deposition (mist CVD).
In the paper, We are study of the hetero epitaxial growth condition for α-Ga₂O₃ thin film on sapphire substrate by mistCVD.