[8a-PA4-1~31] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[8a-PA4-27] Estimation of activation energy for Si-doped β-Ga₂O₃ thin films

〇Satoshi Itoh¹, Yuji Nakabayashi², Iwan Antoro¹, Takeshi Kawae¹ (1.Kanazawa Univ., 2.JAIST)

Keywords:Ga2O3, activation

We are conducing research on β-Ga₂O₃, which is expected as a next generation power device material. In this study, we deposited β-Ga₂O₃ on c-plane sapphire substrate, and we evaluated the crystallinity and electrical properties of β-Ga₂O₃ thin films. In addition, we focused on the activation of dopant Si, and we attempted activate Si and calculate activation energy of Si by using RTA method. As a result, we confirmed Si in the β-Ga₂O₃ thin films ware activated by annealing at 100^oC or higher. Therefore, it is expected to realize a Si activation process at a relatively low temperature.