[8a-PA4-1~31] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[8a-PA4-3] The effect of hole transporting layer for ZnO nanoparticle based LEDs

〇Yasuhisa Fujita¹, Shafiqul Islam Mohammad¹, Jie Lin², Toshiyuki Yoshida¹ (1.Shimane Univ., 2.CPPR, Shimane Univ.)

Keywords:ZnO, LED, nanoparticle

ZnO nanoparticle based LEDs have a problem that the emission intensity under the p-type electrode is weak. This is considered to be caused by the photo quenching due to the absorption by the metal electrode. In this study, p-type particle layer without binder was inserted as a light emitting layer. It was confirmed that the emission intensity was significantly increased by separating the hole transporting layer and light emitting layer.