[8a-PB2-1~11] 4 JSAP-OSA Joint Symposia 2017 (poster)

▲ [8a-PB2-6] Optimization of modulation efficiency of InGaAsP/Si hybrid MOS optical modulator

〇(D)Qiang Li¹、Shinichi Takagi¹、Mitusu Takenaka¹ (1.The Univ. of Tokyo)

キーワード：Si Photonics, Optical Modulator, Si/III-V integration

Si optical modulators suffer from low modulation efficiency and high absorption loss. To improve the modulation efficiency, we have proposed to use an InGaAsP/Si hybrid metal-oxide-semiconductor (MOS) structure for a phase shifter by using direct wafer bonding. Owing to the large electron-induced refractive index change in InGaAsP, we have successfully demonstrated extremely high modulation efficiency of approximately 0.05 Vcm. In this study, we conducted the optimization of the device structure to further improve the modulation efficiency through increasing the overlap between the optical mode and accumulated electrons at the InGaAsP MOS interface.