GaAsSb/InGaAs Double-Gate Tunnel FET with a Subthreshold Swing of 68mV/dec.

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Fri. Sep 8, 2017 9:00 AM - 11:30 AM S22 (Palace B)

Kenji Shiojima(Univ. of Fukui)

9:00 AM - 9:15 AM

〇Nobukazu Kise¹, Shinjiro Iwata¹, Ryosuke Aonuma¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech.)

Keywords:Tunnel FET