[8a-S22-1~9] 13.8 Compound and power electron devices and process technology

[8a-S22-3] GaAsSb based nanowire backward diodes for ambient RF energy harvesting

〇Tsuyoshi Takahashi^1,2, Kenichi Kawaguchi^1,2, Masaru Sato^1,2, Naoya Okamoto^1,2 (1.Fujitsu, 2.Fujitsu Labs.)

Keywords:Nanowire, Diode, GaAsSb

I will report on the first backward diode characteristic of nanowire diodes that consist of a GaAsSb/InAs hetero junction. Epitaxial growth and fabrication process for the nanowire backward diodes were investigated to obtain a small junction capacitance for enhancing energy-conversion efficiency for ambient RF energy harvesting compared to conventional Schottky barrier diodes.