[8a-S22-1~9] 13.8 Compound and power electron devices and process technology

△ [8a-S22-4] Heterojunction Bipolar Transistors with Atomic Diffusion Bonded GaAsSb/InP-Ti-GaN

〇Takuya Hoshi¹, Yuki Yamada¹, Masahiro Nada¹, Yuta Shiratori¹, Miyuki Uomoto², Takehito Shimatsu², Hideaki Matsuzaki¹ (1.NTT Device Technology Labs., 2.Tohoku Univ.)

Keywords:HBT, GaAsSb base, Atomic diffusion bonded InP-Ti-GaN collector