[8a-S22-1~9] 13.8 Compound and power electron devices and process technology

△ [8a-S22-9] Characterization of Vertical 2DHG Diamond MOSFET with Blocking Layer formed by CVD

〇(B)Masayuki Iwataki¹, Nobutaka Oi¹, Takuya Kudo¹, Tsubasa Muta¹, Satoshi Okubo¹, Ikuto Tsuyuzaki¹, Taisuke Kageura¹, Masahumi Inaba^1,2, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.Nagoya Univ., 3.Zaiken)

Keywords:Diamond, Semiconductor, MOSFET

We evaluate the characteristics of the vertical diamond MOSFET which has a doped nitrogen layer .
We obtained the high current density and on/off ratio in wide temperature range.