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[8p-A201-4] Resistivity of Sn-doped β-Ga2O3 single crystal grown by vertical Bridgeman method
Keywords:gallium oxide, Bridgeman, doping
β-Ga2O3 is one of the most attractive wide-bandgap semiconductors because of the bandgap of 4.8eV. We previously obtained a β-Ga2O3 single crystal with a diameter of 1 inch by vertical Bridgeman method with Pt-Rh crucible under atmospheric conditions. In this report, we discuss resistivity of Sn-doped β-Ga2O3 single crystal grown by vertical Bridgeman method.